Wafer-Processing
The Active Business Company GmbH offers wafer services according to the demands of our customers. Due to our established service network our portfolio increases continuously.
Currently the following services can be provided
Thermal Oxidation
Thermal oxidation of Silicon in the field of semiconductors is a deposition technology to process a layer of Silicon-Dioxide onto the surface of a Silicon Wafer. Among other things it´s used for manufacturing of microelectronic circuits. The coating process is based on a chemical reaction of oxygen and silicon at temperatures between 900 ° C and 1100 ° C.
Wet Thermal Oxide
- Wet Thermal Oxide thickness from 100 nm up to 15000 nm
Dry Thermal Oxide
- Dry Thermal Oxide thickness from 10 nm up to 300 nm
- Dry Chlorinated Thermal Oxide thickness from 10 nm up to 300 nm
Annealing
- Thermal Annealing
- Forming Gas Anneal
- gustomer specific temperature and ramp rates
- Standard SEMIStd. Silicon Wafers and other special geometries
Silicon Nitride
Silicon Nitride Silicon in the field of semiconductors is used as an isolation or passivation layer for processing integrated circuits.
In addition, it is used in many processes as masking and stopping material, for example at local oxidation of Silicon Wafers. The advantage here is a different chemical behavior to caustics compared to the standard material Silicon Dioxide, thus caustics can be used which react with Silicon Dioxide but not with Silicon Nitride, or vice versa.
LPCVD Nitride (both side coating)
- Stoichiometric Nitride (Filmstress >800 MPa)
- Low Stress Nitrid (Filmstress <250 MPa)
- Super Low Stress Nitrid (Filmstress <100 MPa)
PECVD Nitride (one side coating)
- Stoichiometric Nitride (Filmstress >400 MPa)
- Low Stress Nitride (Filmstress <250 MPa)
Further Coatings:
- Titanium (Ti)
- Titanium-Nitride (TiN)
- Chrome (Cr)
- Gold (Au)
- Aluminium (Al, AlCu)
- Copper (Cu)
- Nickel (Ni)
- Tantalum (Ta)
- Tungsten (W)
- Silicon-Carbide (SiC)
- Silicon-Nitride (SiN)
- and more
Lasercutting & Scribing
- Diameter reduction and special geometry cuts
- Format: According to SemiStd. or customer specific
- LM depth from 4 µm (soft laser mark) to 60 µm (hard laser mark)
- LM in vector or dot matrix
Wafer thinning
- 2″, 3“, 4″ Si-Wafers up to 10-20µm
- 6” Silicon Wafers down to 50 µm thickness
- 12” Silicon wafers down to 200 µm thickness
- single side polishing (SSP) and double side polishing (DSP) processing